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| BPX 60 Silizium-Fotodiode mit erhohter Blauempfindlichkeit Silicon Photodiode with Enhanced Blue Sensitive BPX 60 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm q Hohe Fotoempfindlichkeit q Hermetisch dichte Metallbauform (ahnlich TO-5) Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronic q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 350 nm to 1100 nm q High photosensitivity q Hermetically sealed metal package (similar to TO-5) Application q Photointerrupters q Industrial electronics q For control and circuits drive Typ Type BPX 60 Bestellnummer Ordering Code Q62702-P54 Semiconductor Group 353 10.95 fmo06011 BPX 60 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 125 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 250 V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 70 850 350 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current A LxB LxW H 7.45 2.73 x 2.73 mm2 mm 1.9 ... 2.3 mm 55 7 ( 55) Grad deg. nA IR Semiconductor Group 354 BPX 60 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 400 nm Spectral sensitivity Quantenausbeute, = 400 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom Short-circuit current Ee = 0.5 mW/cm2, = 400 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 70 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 400 nm Nachweisgrenze, VR = 10 V, = 400 nm Detection limit Symbol Symbol Wert Value 0.20 0.62 460 7.4 ( 5.4) Einheit Unit A/W Electrons Photon mV A S VO ISC tr, tf 3.0 s VF C0 TCV TCI NEP 1.3 580 - 2.6 0.18 2.4 x 10-13 V pF mV/K %/K W Hz cm * Hz W D* 1.2 x 1012 Semiconductor Group 355 BPX 60 Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V Directional characteristics Srel = f () Semiconductor Group 356 |
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